نقد و بررسی
STP10NK80ZFP|
Attribute Value |
Product Attribute |
|
STMicroelectronics |
Manufacturer |
|
MOSFET |
Product Category |
Datasheet |
|
|
Si |
Technology |
|
Through Hole |
Mounting Style |
|
TO-220-3 |
Package / Case |
|
N-Channel |
Transistor Polarity |
|
1 Channel |
Number of Channels |
|
800 V |
Vds – Drain-Source Breakdown Voltage |
|
9 A |
Id – Continuous Drain Current |
|
900 mOhms |
Rds On – Drain-Source Resistance |
|
– 30 V, + 30 V |
Vgs – Gate-Source Voltage |
|
3 V |
Vgs th – Gate-Source Threshold Voltage |
|
72 nC |
Qg – Gate Charge |
|
– 55 C |
Minimum Operating Temperature |
|
+ 150 C |
Maximum Operating Temperature |
|
40 W |
Pd – Power Dissipation |
|
Enhancement |
Channel Mode |
|
SuperMESH |
Tradename |
|
STP10NK80ZFP |
Series |
|
Tube |
Packaging |
|
STMicroelectronics |
Brand |
|
Single |
Configuration |
|
17 ns |
Fall Time |
|
9.6 S |
Forward Transconductance – Min |
|
9.3 mm |
Height |
|
10.4 mm |
Length |
|
MOSFET |
Product Type |
|
20 ns |
Rise Time |
|
1000 |
Factory Pack Quantity |
|
MOSFETs |
Subcategory |
|
1 N-Channel Power MOSFET |
Transistor Type |
| MOSFET |
Type |
|
65 ns |
Typical Turn-Off Delay Time |
|
30 ns |
Typical Turn-On Delay Time |
|
4.6 mm |
Width |
|
0.068784 oz |
Unit Weight |
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